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ZXMN2B03E6
20V SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
V (BR)DSS
20
R DS(on) ( )
0.040 @ V GS = 4.5V
0.055 @ V GS = 2.5V
0.075 @ V GS = 1.8V
I D (A)
5.4
4.6
4.0
Description
This new generation trench MOSFET from Zetex features low on-
resistance achievable with low gate drive.
Features
D
?
?
Low on-resistance
Fast switching speed
?
?
Low gate drive capability
SOT23-6 package
G
S
Applications
?
?
DC-DC converters
Power management functions
?
?
Disconnect switches
Motor control
D
D
D
D
Ordering information
Device
Reel size
Tape width
Quantity per reel
G
S
(inches)
(mm)
Top view
ZXMN2B03E6TA
7
8
3,000
Device marking
2B3
Issue 1 - September 2006
? Zetex Semiconductors plc 2006
1
www.zetex.com
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